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ISL89410, ISL89411, ISL89412
Data Sheet
High Speed, Dual Channel Power
MOSFET Drivers
The ISL89410, ISL89411, ISL89412 ICs are similar to the
EL7202, EL7212, EL7222 series but with greater VDD
ratings. These are very high speed matched dual drivers
capable of delivering peak currents of 2.0A into highly
capacitive loads. The high speed performance is achieved
by means of a proprietary “Turbo-Driver” circuit that speeds
up input stages by tapping the wider voltage swing at the
output. Improved speed and drive capability are enhanced
by matched rise and fall delay times. These matched delays
maintain the integrity of input-to-output pulse-widths to
reduce timing errors and clock skew problems. This
improved performance is accompanied by a 10-fold
reduction in supply currents over bipolar drivers, yet without
the delay time problems commonly associated with CMOS
devices. Dynamic switching losses are minimized with
non-overlapped drive techniques.
Pinouts
July 1, 2009
Features
? Industry Standard Driver Replacement
? Improved Response Times
? Matched Rise and Fall Times
? Reduced Clock Skew
? Low Output Impedance
? Low Input Capacitance
? High Noise Immunity
? Improved Clocking Rate
? Low Supply Current
? Wide Operating Voltage Range
? Pb-Free Available (RoHS compliant)
Applications
? Clock/line Drivers
FN6798.1
ISL89411
(8 LD PDIP, SOIC)
TOP VIEW
ISL89410
(8 LD PDIP, SOIC)
TOP VIEW
? CCD Drivers
? Ultra-Sound Transducer Drivers
NC
INA
GND
INB
1
2
3
4
8
7
6
5
NC
OUTA
V+
OUTB
NC
INA
GND
INB
1
2
3
4
8
7
6
5
NC
OUTA
V+
OUTB
? Power MOSFET Drivers
? Switch Mode Power Supplies
? Class D Switching Amplifiers
? Ultrasonic and RF Generators
INVERTING
DRIVERS
NON-INVERTING
DRIVERS
? Pulsed Circuits
Pin Descriptions
SYMBOL
PIN DESCRIPTIONS
ISL89412
(8 LD PDIP, SOIC)
TOP VIEW
V +
GND
INA, INB
Power voltage from 4.5V to 18V.
Power voltage return
Logic inputs.
NC
INA
GND
INB
1
2
3
4
8
7
6
5
NC
OUTA
v+
OUTB
OUTA
OUTA
OUTB
OUTB
NC
Non-inverted ouput for ISL89410. Inverted output
for ISL89411 and ISL89412.
Non-inverted output for ISL89410 and ISL89412.
Inverted output for ISL89411.
These pins must be left unconnected.
COMPLEMENTARY
DRIVERS
Manufactured under U.S. Patent Nos. 5,334,883, #5,341,047
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2008, 2009. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
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相关代理商/技术参数
ISL89410IP 功能描述:IC DRVR MOSFET DUAL-CH 8-PDIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件
ISL89410IPZ 功能描述:IC DVR MOSFET DUAL-CH 8-PDIP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:*
ISL89411IBZ 功能描述:功率驱动器IC DUAL INVERT DRVR MODIFIED EL7212 8LD RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
ISL89411IBZ-T13 功能描述:IC DRVR MOSFET DUAL-CH 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063
ISL89411IP 制造商:Intersil Corporation 功能描述:
ISL89411IPZ 功能描述:IC DRVR MOSFET DUAL-CH 8-PDIP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:*
ISL89412IBZ 功能描述:功率驱动器IC COMP MOSFET DRVR MODIFIED EL7222 8LD RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
ISL89412IBZ-T13 功能描述:IC DRVR MOSFET DUAL-CH 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063